FDMT800152DC datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combinati.

Application

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

Description

* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineer.

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